| PART |
Description |
Maker |
| 110MT160K 110MT160KB 110MT160MT 90MT80KB 110MT100K |
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
800V 3 Phase Bridge in a INT-A-Pak package
THREE PHASE BRIDGE
CAP 3300PF 100V 100V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 三相桥式
3 PHASE, 90 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 26MB40A 36MB80A 35AMB12026MB 25AMB12026MB 35AMB120 |
SINGLE PHASE BRIDGE 单相桥式
4-Pole Solid State Relay w/o Protection SCR 单相桥式
IC REG LDO 1.0A 1.8V TO-252
IC DAA LITELINK III FW RING DET 3.3V TUBED
equipment to provide connection and isolation to/from the public telephone network
50V Bridge in a D-34A package
SINGLEPHASEBRIDGE
100V Bridge in a D-34A package
1200V Bridge in a D-34A package
400V Bridge in a D-34A package
600V Bridge in a D-34A package
800V Bridge in a D-34A package
1000V Bridge in a D-34A package
|
International Rectifier, Corp.
InternationalRectifier
IRF[International Rectifier]
|
| B2ME3 B6ME3 B4ME3 |
DIODE 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE MBM, 4 PIN, Bridge Rectifier Diode
DIODE 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE MBM, 4 PIN, Bridge Rectifier Diode
DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE MBM, 4 PIN, Bridge Rectifier Diode
|
Vishay Semiconductors
|
| GBU10005 GBU1001 GBU1004 GBU1002 GBU1006 GBU1008 G |
Metalized Polyester Film Axial Lead Capacitor; Capacitance: 1uF; Voltage: 250V; Case Size: 23x14 mm; Packaging: Bulk
10A GLASS PASSIVATED BRIDGE RECTIFIER
Aluminum Polymer Radial Lead Capacitor; Capacitance: 820uF; Voltage: 16V; Case Size: 10x13 mm; Packaging: Bulk 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
DIODES[Diodes Incorporated]
Diodes, Inc.
|
| GBJ1010 GBJ10005 GBJ1001 GBJ1002 GBJ1004 GBJ1006 G |
Aluminum Polymer SMT Capacitor; Capacitance: 6.8uF; Voltage: 25V; Case Size: 6.3x6 mm; Packaging: Tape & Reel 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
10 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
Aluminum Polymer SMT Capacitor; Capacitance: 82uF; Voltage: 20V; Case Size: 10x8 mm; Packaging: Tape & Reel 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| 2KBP08M-BP 2KBP005M-BP |
2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE ROHS COMPLIANT, PLASTIC, CASE KBPM, 4 PIN
2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
|
MICRO COMMERCIAL COMPONENTS
|
| 6GBU005 6GBU01 6GBU02 6GBU04 6GBU06 6GBU08 |
50V Bridge in a GBU package
100V Bridge in a GBU package
200V Bridge in a GBU package
400V Bridge in a GBU package
600V Bridge in a GBU package
800V Bridge in a GBU package
|
International Rectifier
|
| SA57031-XX SA57031-25 SA57031-26 SA57031-31 SA5703 |
Micropower 150 mA, low-noise, low dropout linear regulator with on/off 微功耗为150 mA，低噪声，低压差线性稳压器的开/
RECTIFIER BRIDGE 25A 800V 300A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY
CAP CERAMIC MONO .1UF 50V 10%
Ceramic Multilayer Capacitor; Capacitance:22pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:1.2pF; Capacitance Tolerance: 0.5pF; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0603; Termination:SMD RoHS Compliant: Yes
Ceramic Multilayer Capacitor; Capacitance:1.5pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
Ceramic Multilayer Capacitor; Capacitance:1pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
|
TE Connectivity, Ltd.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| SKIIP82ANB15T1 |
3 PHASE, 100 A, 1500 V, SILICON, BRIDGE RECTIFIER DIODE CASE M8A, MINISKIIP-11
|
SEMIKRON
|
| SKIIP83ANB15T1 |
3 PHASE, 100 A, 1500 V, SILICON, BRIDGE RECTIFIER DIODE CASE M8A, MINISKIIP-11
|
SEMIKRON INTERNATIONAL
|
|
